Save on your hotel - www.hotelscombined.com

iPhone 6 and 6plus

Buy and Sell Gallery

Work From Home

Used Cars For Sale

Real Estate Gallery

E.marketing CoolTools

Generate Income Online!

Advertise And Get Paid

Get Your Ex Back.!


Save on your hotel - www.hotelscombined.com

 
  Explode My List!
 

  
Save on your hotel - www.hotelscombined.com
This Lovely Page Made For You.! Join Ads-mall.com Page & Get More Audience


Top:
Choose location
  More search options
 
Page 1 of 1 View Photos Gallery      
3 ads match your query
Sept 14
Country: India; City: Pune;   map  
  Class 0 Armaflex® Highly flexible, closed-cell insulation material with high water vapour diffusion resistance and low thermal conductivity Key features • Prevents Condensation • Class 0 Fire Performance • Reduces Energy Losses • No Vapour Barrier Required • Low Thermal Conductivity, λ0°C ≤ 0.035 W/(m·K) • FM Approved • High Water Vapour Diffusion Resistance, µ ≥ 7,000 • Completely Closed Cell Structure Class 0 Armaflex® SS Self Seal tubes for quality and Quick Installation
  Other Services
Sept 14
Country: India;   map  
  Class 0 Armaflex® Plus Highly flexible, closed-cell insulation material with high water vapour diffusion resistance and low thermal conductivity and built-in anti-microbial protection Key Features • Active protection against microbes such as bacteria and fungi/mold/mildew • Promotes better indoor air quality • Increased long term thermal efficiency • Lifelong built-in product anti-microbial protection • EPA Approved • Extremely low thermal conductivity, λ0°C ≤ 0.033 W/(m·K) • Very High
  Other Services
Jun 14
Country: United States; City: Inniswold;    
  Wolfspeed’s CGHV96100F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance. For more information please visit www.rayemit.com
  Electronics
Listing: [1]
 

 
Copyright © 2015 ads-mall.com all rights reserved.. Digital Link Services .® 2010-2015
Privacy policy  Contact us